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陈国森讲座:Valley and Spin current generation in graphene

作者 : 陈国森教授 发布于 : 2014/12/01

题目:Valley and Spin current generation in graphene
报告人:陈国森教授(香港城市大学)
联系人:陈克求 教授
时间:2014年12月5日(星期五)上午10:00-11:00
地点:物理楼307(学术报告厅)
报告内容简介:Graphene has become a major research focus since its discovery several years agopnot only for its special electronic properties, but also for its potentials in electronic and spintronic applications. In this presentation, I will discuss the generation of valley and spin polarized current in graphene using quantum pumping and the Goos-Hanchen effect. In quantum pumping a charge current can be generated without an external voltage bias by applying two a.c. electrical potentials and in the Goos-Hanchen effect, electron beams are shifted after transmission through a heterostructure. Using the ferromagnetic proximity effect, strained graphene and properly designed structures, these two techniques can be used to generate pure spin and valleys currents and highly spin polarized and valley polarized currents.
报告人简介:Prof. Kwok Sum CHAN received his BSc  and PhD degrees in physics from University of Hong Kong.  He conducted his post-doctoral research in semiconductor quantum well physics at Oxford University and Nottingham University in UK, before he joined City University of Hong Kong. His research interest is in quantum transport, spintronics and optical properties of semiconductor, graphene and superconductor nanostructures. He has about 100 journal papers. Hisrecent study (in collaboration with University of Science and Technology of China) of the generation of spin current in graphene was reported in Eurekalert, Nanotechweb, Physics World and PhysicsOrg.com.

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