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台湾交通大学林志忠教授学术讲座

创建于2014年09月18日 星期四作者 : wlxyuser1 浏览量 :

时间:9月23日上午10点钟
地点:校图书馆作一场学术报告。

报告的题目和摘要如下:
Electronic conduction properties of indium tin oxide:
single-particle and many-body transport
Juhn-Jong Lin
NCTU-RIKEN Joint Research Laboratory, Institute of Physics and Department of Electrophysics
National Chiao Tung University (Taiwan)
Email: jjlin@mail.nctu.edu.tw该Email地址已收到反垃圾邮件插件保护。要显示它您需要在浏览器中启用JavaScript。  
Indium tin oxide (Sn-doped In2O3-d or ITO) is a very interesting and technologically important transparent conducting oxide.This class of material has been extensively investigated for decades, with research efforts mostly focusing on the application aspects.The fundamental issues of the electronic conduction properties of ITO from room temperature down to liquid-helium temperatures have rarely been addressed thus far. Studies of the electrical-transport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this talk, we show that one can learn rich physics in ITO material, including the semi-classical Boltzmann transport, the quantum-interference electron transport, as well as the many-body Coulomb electron-electron interaction effects in the presence of disorder and inhomogeneity (granularity). To fully reveal the numerous avenues and unique opportunities that the ITO material has provided for fundamental condensed matter physics research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline thin and thick films, homogeneous single-crystalline nanowires, and inhomogeneous ultrathin films. In this manner, we not only address new physics phenomena that can arise in ITO but also illustrate the versatility of the stable ITO material forms for potential technological applications. We emphasize that, microscopically, the novel and rich electronic conduction properties of ITO originate from the inherited robust free-electron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material.Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which in turn causes the experimentally observed (1) a small residual resistance ratio, (2) a linear electron diffusion thermoelectric power in a wide temperature range 1–300 K, and (3) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.
Reference:
J. J. Lin and Z. Q. Li, Electronic conduction properties of indium tin oxide: single-particle and many-body transport, J. Phys.: Condens. Matter26, 343201 (2014). (Topical Review)
 林志忠教授经历
n 1986, 博士, 美国Purdue University 物理系
n 1979, 学士, 台湾交通大学电子物理系
n 2011 –迄今, 国立交通大学特聘教授
n 1997 –迄今, 国立交通大学物理研究所教授
2003 –迄今, 国立交通大学电子物理系合聘教授
n 1992 –1997, 国立台湾大学物理系教授
n 1988 –1992, 国立台湾大学物理系副教授
n 1987 –1988, 美国University of Virginia物理系博士后研究
n 1986 –1987, 美国University of Michigan物理系博士后研究
n 日本理化学研究所 (RIKEN)「低温物理研究室」客员主管研究员 (10/2006; 10–11/2010) (+多次短期访问)
n 香港科技大学物理系访问学者 (12/2006 – 2/2007) (+多次短期访问)
n 美国University of Michigan物理系访问教授 (8/2001 – 7/2002)
n 日本东京大学物理系客员研究员 (2–9/1994)
n 美国Purdue University物理系访问科学家 (7–8/1991)
n 研究领域:
低温物理实验
介观物理 (量子输运、电子相位相干时间)
納米物理 (准一維納米线低温输運现象、納米接点导电过程)
强关联物理 (近藤效应、量子相变)
n Associate Member, C5 Commission on Low Temperature Physics, International Union of Pure and Applied Physics (IUPAP) (2013 – 2015)

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